IMZC120R026M2H CoolSiC™ MOSFET discrete 1200 V G2 in TO-247 4pin with high creepage package
综述
The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
特征描述
- RDS(on) = 26 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Wider max. VGS range from -10 V to +25 V
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage 4.2 V
- Robust against parasitic turn on
- .XT interconnection technology
- Tighter VGS(th) parameter distribution
优势
- Better energy efficiency
- Cooling optimization
- Higher power density
- New robustness features
- Highly reliable
- Easy paralleling
支持
