F3L11MR12W2M1_B74
综述
3-Level 1200 V CoolSiC™ Module
EasyPACK™ 2B 1200 V, 11.3 mΩ 3-Level module in Active NPC (ANPC) topology with CoolSiC™ MOSFET, TRENCHSTOP™ IGBT7, NTC temperature sensor and PressFIT Contact Technology.
特征描述
- CoolSiC™ trench MOSFET technology
- 3-level ANPC topology
- Full 1500 VDC capability with 1200 V switches
- Increased Si diode current rating
- PressFIT technology
- Broadest Easy portfolio
优势
- Superior gate-oxide reliability
- Short and clean commutation loops
- Supports the entire cos φ range - perfect fit for energy storage systems
- Easy design-in
- High degree of freedom for the inverter design
- 150 kW power in solar applications when paralleling two modules
- 75 kW power per module in energy storage systems
图表
视频
培训
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.
支持
