FF2MR12W3M1H_B11

综述

半桥1200 V CoolSiC™ MOSFET Easy模块

EasyDUAL™ 3B 1200 V / 1.44 mΩ半桥模块，采用具有增强型第一代沟槽技术的CoolSiC™ MOSFET、集成式NTC温度传感器和PressFIT 压接技术。

特征描述

  • 12mm高的同类最佳封装
  • 将先进的宽禁带WBG芯片和Easy模块封装相结合
  • 极低的模块杂散电感
  • 较低且一致的栅极电感
  • 非常对称的内部芯片布局
  • 较宽的反向偏置安全工作区（RBSOA）
  • 采用增强型第一代沟槽技术的1200 V CoolSiC™ MOSFET
  • 扩大了推荐的栅极驱动电压窗口（+15…+18 V和0…-5 V）
  • 扩展了最大栅源电压（+23 V 和 -10 V）
  • 过载条件下， Tvjop高达175°C
  • PressFIT引脚

优势

  • 出色的模块效率，实现系统成本优化

  • 通过提高系统效率，降低冷却要求

  • 通过更高的频率，提升系统功率密度

  • 通过降低系统成本，实现最佳性价比

  • 减少了动态因素引起的漂移
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Customers of power electronics require ever more modern, easy connection technologies, which also provide a higher reliability to meet the trends to higher temperatures and new applications.

培训

CoolSiC™ M1H in Easy modules

This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.

With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.

This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.

This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.

With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

支持