FF6MR12KM1HP
综述
62 mm 1200 V , 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM).
特征描述
- High current density
- Low switching losses
- Superior gate oxide reliability
- Robust integrated body diode
- High cosmic ray robustness
- High speed switching module
- Symmetrical module design
- Standard construction technique
优势
- Minimizes cooling efforts
- Reduction in volume and size
- Reduced system costs
图表
支持
