EVAL-1ED3142MU12F-SIC Evaluation board for 1ED3142MU12F - 2300 V, 6.5 A, 3 kV (rms) single-channel isolated gate driver

Überblick

The EVAL-1ED3142MU12F-SIC is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs.

This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing.

1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Zusammenfassung der Merkmale

  • EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family)
  • For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • 6.5 A typical sinking and sourcing peak output current
  • 35 V absolute maximum output supply voltage
  • 45 ns propagation delay with 20 ns input filter
  • High common-mode transient immunity CMTI >300 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil narrow-body package

Vorteile

  • Integrated filters reduce the need of external filters
  • Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
  • Suitable for operation at high ambient temperature and in fast switching applications
  • UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • The precise threshold and timings, combined with UL 1577 certification enable superior application safety
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