EVAL-1ED3491MX12M
Evaluation board for 1ED3491Mx12M - 2300 V, 9 A, single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off
The EVAL-1ED3491MX12M is in half-bridge configuration with two gate driver ICs (1ED3491MU12M) to drive power switches such as IGBTs and SiC MOSFETs. The switch type can be freely chosen. The board has a size of 85 x 55 x 15 mm without any power switch assembled. TRENCHSTOP™ IGBT IKW40N120H3 or CoolSiC™ MOSFET IMW120R030M1H is recommended. This board is best suited for double pulse testing and evaluation. The low voltage supply interface can be controlled by a pulse generator, a microcontroller or any other suitable digital circuit. The evaluation board has a power supply for the primary and secondary sides implemented.
Zusammenfassung der Merkmale
- Galvanically isolated power supply for both secondary sides
- Resistors marking for the adjustable functions of each gate drive
- Flexible EiceDRIVER™ Enhanced single channel isolated gate driver 1ED34xx family (X3 analog family)
- ±9 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- Separate source and sink outputs
- Active Miller clamp (clamp driver for external MOSFET)
- Precise VCEsat detection (DESAT) with fault output
- IGBT soft turn-off after desaturation detection
- Parameter adjustment from input side with external resistor:
- Adjustable DESAT filter time with ADJB pin
- Adjustable soft-off current level with ADJA pin
- FLT and RDY status signaling to µController
- 11 V/12 V undervoltage lockout (UVLO) protection with hysteresis
Vorteile
- Over-temperature shut down at 160 °C (±10 °C)
- Tight IC-to-IC propagation delay matching (30 ns max.)
- High common-mode transient immunity CMTI >200 kV/μs
- Suitable for operation at high ambient temperature up to 125 °C
- Small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm)
- UL 1577 (planned) VISO = 6 kV (rms) for 1 s, 5 kV (rms) for 1 min
- Enable fast design cycles due to low external component count and still offers adjustable DESAT with Soft-off functionality
- The precise threshold and timings, combined with UL 1577 certification enable superior application safety
- Perfect fit for all applications requiring a reliable DESAT protection, benefit from an active Miller clamp and prefer small PCB space requirements
EiceDRIVER™ X3 Enhanced Family: 1ED34xx
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
