EVAL-2ED2106 Evaluation Board for 2ED2106S06F, 650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode
Überblick
The EVAL-2ED2106 comes with the gate driver IC, 2ED2106S06F and two MOSFETs, IPD60R360P7, in half bridge configuration. This board is designed to test basic functionalities and highlight features of the Infineon silicon-on-insulator (SOI)gate driver. The user can test PWM input-output performance, check propagation delay, current capability, and high switching frequency performance. The board can be used to do a double pulse test.
Zusammenfassung der Merkmale
- Operating voltages up to + 650 V
- Using Infineon SOI-technology
- Negative VS transient immunity of 100 V
- Integrated low ohmic bootstrap diode
- Designed for bootstrap operation
- Maximum supply voltage of 25 V
- Under voltage lockout (UVLO)
- 200 ns propagation delay
- Logic operational up to –11 V on VS Pin
Vorteile
- Reduced BOM cost & saves space
- 50% lower level-shift losses
- Excellent ruggedness & noise immunity
Diagramme
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