EVAL_2EDB_HB_GAN
CoolGaN™ GIT HEMT half-bridge evaluation board with EiceDRIVER™ 2EDB8259Y
EVAL_2EDB_HB_GaN enables the testing of Infineon CoolGaN™ GIT HEMT in combination with EiceDRIVER™ 2EDB8259Y. The board allows to configure the auxiliary supply, that can be bipolar or unipolar, isolated or non-isolated, with bootstrap or without. Using an external inductor, the board can be configured for buck or boost-mode, double-pulse testing or continuous PWM operation, hard or soft-switching at power levels to several kW and frequencies up to MHz range. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors.
For board samples please contact our support.
Zusammenfassung der Merkmale
- Simple GaN half-bridge with dedicated GaN driver ICs
- Configurable auxiliary supply: unipolar vs. bipolar (with regulation on positive or negative rail), isolated vs non-isolated (bootstrap)
- Shunt on low-side GaN for current measurement
Vorteile
- Easy setup and use
- Enable testing with different configurations (Buck, Boost, Direct and Reverse Double Pulse)
- Evaluate high-frequency capabilities of GaN
- Evaluate waveforms with low ringing, overshoot, EMI
- Enables easy evaluation at multi-kilowatt power levels
- Shoot-through check and Eoss measurements via current shunt
Potentielle Zielanwendungen
- Telecom power supply
- Server power supply
- Micro inverter solutions
