CYEL15B102Q-SXM | Radiation tolerant, highly reliable, small footprint, 2Mb non-volatile Serial Peripheral Interface (SPI) F-RAM for New Space.

Überblick

Our radiation tolerant, 2Mb, SPI Ferroelectric RAM (F-RAM) is one of the industry’s lowest power, non-volatile memory solutions that is guaranteed to 50 Krad (Si) TID and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for new space applications.

Zusammenfassung der Merkmale

Mb density
SPI interface operating up to 25 MHz
Infineon instant non-volatile write technology
10-trillon read/write cycle endurance
120 years data retention at +85°C
Extremely low programming voltage (2V)
2.0 V–3.6 V operating voltage range
Low operating current (10 mA max)
–55°C/+125°C military temperature grade
8-pin SOIC package

Vorteile

AEC-Q006 compliant
ROHS compliant
50 Krad (Si) TID radiation performance
Single Lot Date Code (SLDC)
100% electrical testing coverage
Certificate of Conformance (CoC)

Potentielle Zielanwendungen

Data logging for calibration data for satellites
Data storage for sensors and instruments
Stand-alone boot code or embedded boot code storage for microcontrollers for cube sat payloads
Secure key storage for data encryption
Replacement for serial interface NOR flash and EEPROMs