CY15B104Q-LHXI High-Density 4 Mbit SPI Nonvolatile Memory with Industrial Qualification and Wide Operating Range

Überblick

The CY15B104Q-LHXI is a 4 Mbit F-RAM, offering 151-year data retention, rapid bus-speed write operations, and substantial write endurance, making it ideal for nonvolatile memory applications. It provides reliable, high-speed performance, and significant benefits as a hardware replacement for serial EEPROM or flash.

Zusammenfassung der Merkmale

  • 4 Mbit F-RAM logically organized as 512 K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Up to 40 MHz frequency
  • Sophisticated write protection scheme
  • Manufacturer ID and Product ID
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40°C to +85°C
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