Synchronous SRAM
High-speed static RAM memory technology architecture with synchronous operation for improved data throughput.
Synchronous SRAM Unterkategorien
Sync SRAMs are a type of volatile random-access memory (RAM) that use flip-flop based latching circuitry to store each bit. Unlike async SRAMs, sync SRAMs have a clocked interface that enables high throughput. Infineon provides the industry’s broadest portfolio of DDR and QDR products with the reliability of on-chip error detection and correction.
Density: 2 Mb, 4 Mb, 9 Mb, 18 Mb, 36 Mb, 72 Mb, 144 Mb
Interface: Parallel (x8, x16, x32, x72)
Infineon’s sync SRAM memory family
- Standard sync SRAMs: Designed for cache applications, with a 2-bit burst counter supporting cache line sizes of four. Available in densities from 2 Mbit to 72 Mbit.
- No Bus Latency (NoBL™) sync SRAMs: Also known as Zero bus turn-around (ZBT) SRAMs, these eliminate idle cycles during bus transitions. Two versions are available: Flow-through and pipelined. Densities range from 2 Mbit to 144 Mbit.
- DDR-II/II+/II+ Xtreme sync SRAMs: Featuring dual data rate (DDR) I/Os, suitable for read-intensive functions in networking/communication applications.
- QDR-II/II+/II+ Xtreme sync SRAMs: Similar to DDR but featuring quad data rate (QDR) I/Os, ideal for low-latency network applications, with separate read and write buses. Densities range from 18 Mbit to 144 Mbit.
- QDR-IV sync SRAMs: High-performance memory with two independent bidirectional data ports, maximizing random transactions per second. Available in 72 Mbit and 144 Mbit densities, suitable for high-speed networking applications.
- Infineon's sync SRAMs portfolio caters to various performance, latency, and density requirements, enabling efficient memory solutions for a wide range of networking applications.
SRAM memory key features
- Highest RTR - Industry-leading Random Transaction Rate of 2132 MT/s.
- QDR™-IV SRAMs are capable of operating in burst-of-two or banked burst-of-two modes, which deliver the fastest clock speeds and highest RTR of all QDR™ SRAMs and also higher than competing RLDRAMs and DDR3 DRAMs.
- High reliability - On-chip Error correction code (ECC) to provide the lowest soft error rate of <0.1 FIT/Mbit
- Improved Signal Integrity - The On-Die-Termination (ODT) feature in the DDR-II+ family of devices improves the signal quality at high frequencies (greater than 300 MHz)
Synchronous SRAM with ECC highlights
Infineon's synchronous SRAMs with ECC are the only high-density standard sync and NoBL™ SRAMs in the market to be offered with the reliability of on-chip error detection and correction. With ECC to detect and correct single-bit errors, Infineon's synchronous SRAMs offer a FIT rate of <0.01 FIT/Mb that is 1,000x lower than a standard SRAM without ECC and are availabe in Industry-standard, RoHS-compliant packages.
About Dual data rate (DDR) sync SRAMs
DDR SRAMs are similar to the legacy synchronous burst SRAM products but with double data rate I/Os. Like the synchronous burst SRAMs, they are used for read-intensive functions such as packet lookup and packet classification in networking/communication applications. DDR SRAMs have a maximum clock speed of 550 MHz with a read latency of 1 cycle and are available in an industry-standard 165-ball BGA.
QDR™-IV solution provides fast random memory access
Quadruple data rate (QDR™) SRAMs are similar to NoBL SRAMs but with architectural enhancements such as double data rate I/Os and dedicated read/write ports. QDR™ SRAMs are used in networking applications where reads and writes are balanced such as packet buffer, statistics counters, flow state, and scheduling. QDR™ SRAMs operate at a maximum speed of 1066 MHz with a read latency of 1 cycle and are available in an industry standard 165-ball BGA.
Random transaction rate (RTR)
Random transaction rate (RTR) is the number of fully random read or write transactions a memory can perform every second. It is measured in MT/s, or mega transactions per second. RTR is a critical metric in high-performance computing, general-purpose servers, and image-processing applications., where memory access is unpredictable.
The QDR consortium-defined quadruple data rate (QDR™) SRAM products are geared primarily to the networking and communication market. QDR™ SRAMs allow access to any two memory locations on every clock cycle, and performance never depends on which memory location was accessed in the previous clock cycle. Hence, with QDR™ SRAM, RTR is guaranteed.
QDR™-IV SRAMs are capable of operating in burst-of-two or banked burst-of-two modes, which deliver the fastest clock speeds and highest RTR of all QDR™ SRAMs and also higher than competing RLDRAMs and DDR3 DRAMs.
Infineon's QDR™-IV SRAMs provide RTRs up to 2132 MT/s.
