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Silicon Carbide CoolSiC™ Schottky Diode solutions - Improve efficiency and solution costs

Infineon is the world’s first Silicon Carbide (SiC) discrete power supplier. Long market presence and experience enable Infineon to deliver highly reliable, industry-leading SiC performance. The differences in material properties between Silicon Carbide and Silicon limit the fabrication of practical Silicon unipolar diodes (Schottky diodes) to a range up to 100 V–150 V, with relatively high on-state resistance and leakage current. In SiC material Schottky diodes can reach a much higher breakdown voltage. The Infineon portfolio of Silicon Carbide (SiC) products covers 600 V and 650 V to 1200 V Schottky diodes.

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Highlights
Features  Advantages Benefits Applications
  • No reverse recovery charge
  • Purely capacitive switching
  • High operating temperature (T j, max 175°C)
  • Low turn-off losses
  • Reduction of CoolMOS™ or IGBT turn-on loss
  • Switching losses independent from load current, switching speed and temperature
  • System efficiency improvement compared to Si diodes
  • Reduced cooling requirements
  • Enabling higher frequency/increased power density
  • Higher system reliability due to lower operating temperature
  • Reduced EMI
Features  Advantages Benefits Applications

 

Reverse recovery charge of SiC Schottky diodes versus Si pin diodes

Reverse recovery charge of SiC Schottky diodes versus Si pin diodes.

The majority carrier characteristics of the device imply no reverse recovery charge and the only contribution to the switching losses comes from the tiny displacement charge of capacitive nature. In the same voltage range, Silicon devices show a bipolar component resulting in much higher switching losses. The graph shows the comparison between various 600V devices.

Improved system efficiency (PFC in CCM mode operation, full load, low line)

Switching characteristics of the Silicon Carbide diodes.

The fast switching characteristics of the Silicon Carbide (SiC) diodes provide clear efficiency improvements at system level. The performance gap between SiC and highend Silicon devices increases with the operating frequency.

System solution for PFC

CCM PFC Power [W] CoolMOS™ R DS(on) [mΩ] CoolSiC™ diodes I F [A]
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500 1 x 90 1 x 190 1 x (4~6)
750 1 x 99/2 x 190 2 x 190 1 x (6~8)
1200 2 x (70~99)   1 x (8~10)
2000   2 x 99 2 x (6~8)/1 x (12~16)
2700 3 x (41~80)   2 x (8~10)/1 x (16~20)
3000   2 x 65/1 x 19 2 x (8~10)/1 x (16~20)
CCM PFC Power [W] CoolMOS™ R DS(on) [mΩ] CoolSiC™ diodes I F [A]
Server Telecom Server and telecom
  • R DS(on) depends on target efficiency level, switching frequency and thermal management
  • Silicon Carbide (SiC) diode current level depends on switching frequency, current limitation and thermal management
Videos

CoolSiC™ 1200 V Schottky diode  in TO-247 real 2-pin package – product introduction

In this video you will be guided through some key benefits and features of Infineon newly launched CoolSiC™ 1200V Schottky diode in TO247 real 2 pin package.

This video introduces some application examples and benefits you can get when changing from Si 2 pin diode to our CoolSiC™ 1200 V Schottky diode in TO247 real 2 pin package.

The latest most price-performance generation of Infineon CoolSiC™ Schottky diode 650 V G6 offers the best efficiency per dollar.

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