AIDK16S65C5

Überblick

The 5th Generation CoolSiC™ Automotive Schottky Diode and represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes

Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermalcharacteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio. This ensures meeting the most stringent application requirements inthe 650V voltage class.

Zusammenfassung der Merkmale

  • Revolutionary semiconductor material - Silicon Carbide
  • Benchmark switching behavior
  • No reverse recovery/ No forward recovery
  • Temperature independent switching behavior
  • High surge current capability
  • Pb-free lead plating; RoHS compliant
  • Junction Temperature range from -40°C to 175°C
  • System efficiency improvement over Si diodes
  • System cost / size savings due to reduced cooling requirements
  • Enabling higher frequency / increased power density solutions
  • Higher system reliability due to lower operating temperatures
  • Reduced EMI

Potentielle Zielanwendungen

  • Traction inverter
  • Booster / DCDC Converter
  • On board Charger / PFC
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