IDH04G65C6
Überblick
Unparalleled efficiency and price performance
The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).
Zusammenfassung der Merkmale
- The lowest V F: 1.25V
- Best-in-class figure of merit (Q c x V F)
- No reverse recovery charge
- Temperature independent switching behavior
- High dv/dt ruggedness
- Optimized thermal behavior
Vorteile
- Improved system efficiency over all load conditions
- Increased system power density
- Reduced cooling requirements and increased system reliability
- Enables extremely fast switching
- Easy and effective match with CoolMOS™ 7 families
- Optimal price performance
Potentielle Zielanwendungen
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