IDWD40G120C5
1200 V Silicion Carbide Schottky diode in TO-247-2 package
CoolSiC™ Schottky diode generation 5 1200 V, 40 A in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in this package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive cost point.
Zusammenfassung der Merkmale
- No reverse recovery current, no forward recovery voltage
- Temperature-independent switching behavior
- Low forward voltage even at high operating temperature
- Tight forward voltage distribution
- High surge current capability
Vorteile
- Easy plug and play with silicon diodes
- System efficiency improvement over Si diodes
- Enabling higher frequency / increased power density solutions
- System reliability improvement
