IDFW80C65D1

Überblick

650 V silicon power diode in TO-247 advanced isolation package

Rapid 1 switching 650 V, 80 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.

Zusammenfassung der Merkmale

  • 650V Emitter Controlled technology
  • Temperature stable behaviour of key parameters
  • Low forward voltage (VF)
  • Low reverse recovery charge (Qrr)
  • Low reverse recovery current (Irrm)
  • Maximum junction temperature 175°C
  • 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
  • 100 % tested isolated mounting surface
  • Pb-free lead plating
  • RoHS compliant
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