IDP08E65D2
Überblick
Rapid 2 switching 650 V, 8 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.
Zusammenfassung der Merkmale
- Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance
- Low reverse recovery time (trr)
- Lowest Irrm to provide lowest turn-on losses on the boost switch
Potentielle Zielanwendungen
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