IDW30C65D1
Überblick
Rapid 1 switching 650 V, 30 A emitter controlled silicon power diode in common cathode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
Zusammenfassung der Merkmale
- 1.35 V temperature-stable forward voltage (VF)
- Highest softness-factor for ultimate softness and low EMI filtering
- Lowest Irrm to provide low turn-on losses on the boost switch
- For applications switching between 18kHz and 40kHz
Potentielle Zielanwendungen
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