GaN HEMT – Gallium Nitride Transistor
CoolGaN™ – discrete and integrated solutions delivering highest efficiency and power density in consumer, industrial, and automotive applications
Infineon’s GaN transistors are highly efficient for power conversion in the voltage range of up to 700 V. Our GaN devices have fast turn-on/-off speed, minimum switching losses, and a large variety of package options, enabling simple and fast time-to-market. They are qualified to extensive criterion, exceeding industry standards. GaN technology significantly enhances overall system performance with minimized system cost and increased ease of use.
- 40 V – 700 V GaN devices
- Enhancement mode (e-mode)
- 4 A to 150 A selection range
- Integrated power stages
- Broad package selection
- Ultrafast switching-speed
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate and output charge
- Superior FOMs
- Improve system efficiency
- Improve power density
- Reduce system weight
Infineon offers a broad portfolio of single- and dual-channel isolated and non-isolated gate drivers for GaN. When combined with Infineon's GaN power semiconductors, the use of EiceDRIVER™ gate driver ICs offers numerous advantages such as maximum efficiency and power density along with excellent performance in power conversion applications. Additionally, they provide high reliability to ensure robustness even under challenging conditions.
Gallium nitride target applications include USB-C adapters and chargers, 48 V power distribution, server and telecom SMPS, solar and energy storage systems, motor drives, robots and drones, and more.
Infineon's CoolGaN™ technology offers a transformative solution to take your designs to new heights.
Discover our latest and upcoming product developments ranging from power transistors, to highly integrated solutions with exceptional reliability, top-notch quality, highest power density and leading efficiency. Click here for more insights.
Infineon Developer Community is available 24x7 for you to connect and network with engineers across the globe. Get help from Infineon support engineers, and expert members to solve your design challenges anytime, from anywhere, in any topic, and in your preferred language.
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Scaling GaN to higher power levels in IBCs and LV drives
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10 kW electric vehicle charger with CoolGaN™
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Driving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs
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Infineon CoolGaN™ delivers dynamic and cost effective solutions
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Experience the difference of Si / SiC / GaN technology
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CoolGaN™ - the new power paradigm
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 1
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 2
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CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ Part 3
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Infineon’s 3.6 kW LLC and PFC full system solution using CoolGaN™
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840 watt isolated full-bridge primary, center tap secondary evaluation unit using CoolGaN™
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Infineon’s ¼ brick full-bridge to center tap isolated DC to DC converter
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3600 W full-bridge to full-bridge LLC DC-DC CoolGaN™ demonstration board
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3-phase GaN motor inverter demonstration with CoolGaN™
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The advantages of using the CoolGaN™ 600 V e-mode HEMTs in class E wireless charging applications
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Infineon demonstration boards for telecom featuring #CoolGaN™
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Rethink your system: hyper-scale computing enabled by #Infineon
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Infineon’s GaN solution – easier to use GaN than ever before
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Dr. Gerald Deboy, Senior Principal Power Semiconductors and System Engineering, gives insights into CoolGaN™
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Get the know-how of driving CoolGaN™ e-mode HEMTs from an expert!
| GaN EiceDRIVER™ -
Unboxing CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™
| EVAL_1EDF_G1_HB_GAN -
Driver ICs for GaN HEMTs
| GaN EiceDRIVER™ -
Lab session - 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
| Watch in CN language
| EVAL_2500W_PFC_GAN_A -
Unboxing 2500W full-bridge totem pole PFC evaluation board using CoolGaN™ 600V e-mode HEMT
| EVAL_2500W_PFC_GAN_A -
CoolGaN™ 600V e-mode HEMTs bring enterprise and hyperscale data center servers to the next level of efficiency
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Wireless power devices with GaN
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Multicopter solutions with AURIX™ and CoolGaN™
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Dr. Wei Deng, Senior Product Marketing Manager High Voltage GaN - CoolGaN™ opens new horizons for applications
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CoolGaN™ - the new power paradigm. Ultimate efficiency and reliability.
When we are designing a switching mode power supply, PCB layout is always an important topic. Solving interference problems by slowing down the switching speed of power devices is no longer a solution. Join us to see how to optimize PCB layouts.
This talk will focus on two board design platforms that demonstrate the scalability of GaN power solutions in different applications. For server DC-DC converters, you will see 4- and 6-phase IBC buck converters with 1.6 kW and 2.4 kW output power respectively, each achieving ~97% peak efficiency. For LV FOC motor drives, you will see a “matchbox-sized” drive with 1 kW output power using 2 paralleled HEMTs for drones, servos, and e-bikes; and a motor drive with 8 kW output power using 8 paralleled HEMTs for e-scooters and power tools. The recommendations for scaling the two different designs are based on a holistic system approach, targeting the highest efficiency and power density to meet customer needs.
- Get to know the features of CoolGaN™ half-bridge IPS and the benefits it brings for charger/adapter applications
- Identify the topologies in which a CoolGaN™ half-bridge IPS can be used to build a charger/adapter
- Be acquainted with a use case for CoolGaN™ half-bridge IPS
This training provides an insight about the system benefits of wide-bandgap devices, which will conquer market share in areas where power density, efficiency and/or battery range are decisive. The training focuses on two applications, mobile chargers and on-board chargers, and will talk about the challenges faced by the solutions today and how SiC and GaN provide next levels of performance.
Understand why to use WBG switches for bi-directional converters, the topologies used and how they function.
By watching this eLearning you will:
- Understand package inductance
- Know why wide bandgap transistors are more susceptible to package inductance, and
- Identify which Infineon package types have lower inductance
In this eLearning you will get an overview of the main features and benefits of Infineon’s 600 V CoolGaN™ transistors.
In this eLearning you will learn about the similarities and differences of GaN power transistors compared to their silicon counterparts.
In this training, you will learn about the transient voltage ratings that were added to CoolGaN™ datasheets.
In this training, we will show you Infineon’s CoolGaN™ - GaN HEMTs methodology.
CoolGaN™ - Gallium Nitride Transistors are the power devices with the best performance available on the market. Get to know more about this technology.
Do you want to learn about switched mode power supplies (SMPS), but have little to no background in electrical engineering? Then watch this training series!
It will take you on a journey: You will start with the basics of electrical engineering and learn the principles of semiconductors so you are fully prepared to dive into the world of SMPS.
Part 1 - Electrical engineering fundamentals (Chinese version)
Part 2 - Principles of semiconductors (Chinese version)
Part 3 - Introduction to SMPS (Chinese version)
Part 4 - SMPS topologies (Chinese version)
