IGLD65R080D2 CoolGaN™ Transistor 650 V G5

Überblick

The IGLD65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.

Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.

Zusammenfassung der Merkmale

  • 650 V e-mode power transistor
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Low dynamic RDS(on)
  • High ESD robustness: 2 kV HBM - 1 kV CDM
  • Bottom-side cooled package
  • JEDEC qualified (JESD47, JESD22)

Vorteile

  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultrahigh power density designs
  • Supports BOM cost savings
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