IGLR60R340D1

Überblick

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

This product is not recommended for new designs. Please explore its successor IGLR65R270D2

The IGLR60R340D1 enables more compact topologies and increased efficiency at higher frequency operation.

It is certified through an extensive GaN-specific qualification process, exceeding industry standards.

Housed in the leadless TSON-8 (ThinPAK 5x6) package with a height of 1 mm only, it is perfect for achieving highest power density in low-power switched mode power supplies, such as USB-C adapters and chargers.

 

Zusammenfassung der Merkmale

  • E-mode HEMT – normally OFF 
  • Ultra fast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Bottom-side cooled

Vorteile

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Potentielle Zielanwendungen

  • Low-power SMPS
  • Charger / adapters
  • SMPS for Industrial, telecom, datacenter based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).
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