1ED3431MC12M
3 A, 5.7 kV single-channel flexible isolated gate driver with active Miller clamp, adjustable DESAT and Soft-off. UL 1577 & VDE 0884-11 certified
EiceDRIVER™ Enhanced single-channel highly flexible isolated gate driver with ±3 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) for IGBTs, MOSFETs and SiC MOSFETs.
1ED3431MC12M belongs to the EiceDRIVER™ Enhanced 1ED34xx family (X3 analog family) – single-channel isolated gate driver with adjustable DESAT and soft-off. Suitable for IGBTs, MOSFETs and SiC MOSFETs. 1ED3431 offers high configurability with DESAT (adjustable filter time), and soft-off (adjustable current level), through external resistor from input side (ADJA and ADJB pin). The driver IC also offers separate output, active Miller clamp, Fault, and over temperature shutdown.
1ED3830 (X3 Digital) version available, offer 27 configuration registers accessible via I2C.
Zusammenfassung der Merkmale
- Flexible EiceDRIVER™ Enhanced single channel isolated gate driver 1ED34xx family (X3 Analog family)
- For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- ±3 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- Separate source and sink outputs
- Active Miller clamp
- Precise VCEsat detection (DESAT) with fault output
- IGBT soft turn-off after desaturation detection
- Parameter adjustment from input side:
- Adjustable DESAT filter time with ADJB pin
- Adjustable soft-off current level with ADJA pin
- FLT and RDY status signaling to µController
- 11 V/12 V undervoltage lockout (UVLO) protection with hysteresis
Vorteile
- Over-temperature shut down at 160 °C (±10 °C)
- Tight IC-to-IC propagation delay matching (30 ns max.)
- High common-mode transient immunity CMTI >200 kV/μs
- Suitable for operation at high ambient temperature up to 125 °C
- Small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm)
- UL 1577 VISO = 6.84 kV (rms) for 1 s, 5.7 kV (rms) for 1 min
- IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, reinforced)
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Enable fast design cycles and the best-in-class DESAT accuracy thanks to low external component count and the adjustable DESAT with Soft-off
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The precise threshold and timings, combined with UL 1577 and IEC 60747-17/VDE 0884-11 certifications enable superior application safety
- Perfect fit for all applications requiring a reliable DESAT protection, benefiting from an active Miller clamp and preferring small PCB space requirements
EiceDRIVER™ X3 Enhanced Family: 1ED34xx
- The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
- The EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
- The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
- Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.
