1EDI3050AS The EiceDRIVER™ 1EDI3050AS is an automotive qualified single channel high voltage gate driver optimized for IGBT and SiC power technologies.
Überblick
The EiceDRIVER™ 1EDI3051AS is galvanically isolated using Infineon’s coreless transformer technology. Comprehensive safety features and ISO 26262 compliance enable system level ASIL D classification, while accompanying safety documents ease FMEDA analysis. Full configurability via SPI enables platform development. The integrated high accuracy flyback controller can optimize the supply architecture and reduce conduction losses in power devices.
Zusammenfassung der Merkmale
- For IGBTs/SiC-MOSFETs up to 1200 V
- Integrated SPI functionality
- CMTI up to 150 V/ns up to 1000 V
- 6.8 kV reinforced insulation (DIN VDE)
- Integrated booster (up to 20 A peak)
- Integr. flyback controller (2% acc.)
- Safety inputs on both sides
- Propagation delay 60 ns typical
- Integrated dual 12-Bit ADC
- Redundant DESAT and OCP protection
- Gate and output stage monitoring
- ISO26262 SEooC for safety up to ASIL B
Vorteile
- High configurability
- Easy platform development
- Supports highest system efficiency
- Saving the ext. isolated power supply
- Supports ASIL D on system level
- Easy FMEDA analysis
- Easy system safety architecture
- AEC-Q100 qualified
- Compact DSO-36 fine pitch package
Potentielle Zielanwendungen
- Traction inverters for HEV and EV
- eDisconnect (solid state battery main disconnection)
- eFuse (solid state HV auxiliaries disconnection)
Safety documentation
Product Variant | Driver support | Additional Functionality |
IGBT |
ADC for Temperature Diode |
|
IGBT |
Active Short Circuit | |
1EDI3023AS | IGBT | ADC for NTC & DC-Link |
1ED13030AS | SiC MOSFET | ADC for Temperature Diode |
1EDI3031AS | SiC MOSFET | Active Short Circuit |
1EDI3033AS | SiC MOSFET | ADC for NTC & DC-Link |
1EDI3050AS | IGBT / SiC MOSFET | SPI configurability |
1EDI3051AS | IGBT / SiC MOSFET | SPI configurability and dual monitoring & clamping |
Diagramme
Videos
Support