2ED1322S12M 1200 V high current half-bridge gate driver IC with integrated bootstrap diode and OCP

Überblick

EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Zusammenfassung der Merkmale

  • Floating channel designed for bootstrap operation
  • Maximum bootstrap voltage (VB node) of + 1225 V
  • Operating voltages (VS node) upto + 1200 V
  • Negative VS transient voltage immunity of 100 V with repetitive 700 ns pulses
  • 2.3 A / 4.6 A peak output source / sink current capability
  • Integrated ultra-fast over-current protection (OCP)
  • ± 5% high accuracy reference threshold
  • Less than 1 us over-current sens to output shutdown
  • Integrated ultra-fast, low resistance bootstrap diode
  • Integrated dead-time and shoot-through prevention logic
  • Enable, Fault, and programmable Fault clear RFE input
  • Logic operational up to –8 V on VS Pin
  • Independent per channel undervoltage lockout (UVLO)
  • 25 V VCC supply voltage (maximum)
  • Separate Logic (VSS) and output ground (COM)
  • Greater than 5 mm clearance / creepage
  • 2 kV HBM ESD capability

 

Vorteile

  • 1200 V High current capability (2.3 A/4.6 A) with Integrated bootstrap diode in tiny foot print provides reduced BOM cost, smaller PCB space at lower cost with simpler design 
  • Optimized gate driver solution with design flexibility for 1200 V IGBT/SiC based PIM, discrete switch
  • 100 V negative VS increased reliability / robustness
  • 50% lower level shift losses leads lower temperature operation and higher reliability
  • Latch-up immune increased reliability
  • Fast and accurate integrated over-current protection, provides space and cost savings compare to a discrete op-amp component solution while protecting the switches
  • Under-voltage lockout provides protection at low supply voltage
product image for 2ED1322S12M
Diagramme
Trainings

Meet the EiceDRIVER™ 1200 V level-shift gate driver family

Our 1200 V level-shift gate driver family is a high-voltage, level-shift technology that provides unique, measurable, and best-in-class advantages, including an integrated bootstrap-diode and industry best-in-class robustness to protect against negative transient voltage spikes.

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