2ED21824S06J - Infineon Technologies

Überblick

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package

650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-14 package. The DSO-8 package version is also available: 2ED2182S06F.

Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Zusammenfassung der Merkmale

Operating voltages (VS node) upto + 650 V
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
High and Low Voltage Pins Separated for Maximum Creepage and Clearance
Separate logic and power ground
Floating channel designed for bootstrap operation
Integrated shoot-through protection with built-in dead time (programmable deadtime)
Maximum supply voltage of 25 V
Independent under voltage lockout (UVLO) for both channels
200 ns propagation delay
HIN, LIN input logic
Logic Operational up to –11 V on VS Pin
Negative Voltage Tolerance On Inputs of –5 V
The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration

Vorteile

Integrated bootstrap diode - Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
50% lower level-shift losses
Excellent ruggedness and noise immunity against negative transient voltages on VS pin

Find our Variations for 2ED21824S06J

Part No	Package	Input logic	Interlock	Deadtime
2ED2181S06F	DSO - 8	HIN, LIN	No	None
2ED21814S06J	DSO - 14	HIN, LIN	No	None
2ED2182S06F	DSO - 8	HIN, LIN	Yes	Internal 400 ns
2ED2183S06F	DSO - 8	HIN, /LIN	Yes	Internal 400 ns
2ED21834S06J	DSO – 14	HIN, /LIN	Yes	Programmable 400 ns - 5000 ns
2ED2184S06F	DSO - 8	IN, /SD	Yes	Internal 400 ns
2ED21844S06J	DSO – 14	IN, /SD	Yes	Programmable 400 ns - 5000 ns

Diagramme