2ED3143MC12L 6.5 A, 5.7 kV (rms) dual-channel isolated gate driver with deadtime control, UL 1577 certified, 14.7 V UVLO
EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETs and SiC MOSFETs.
It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation
as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time.
Zusammenfassung der Merkmale
- For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- Up to 6.5 A typical peak output current
- 39 ns propagation delay
- 35 V absolute maximum output supply voltage
- High common-mode transient immunity CMTI > 200 kV/µs
- Active shutdown and short circuit clamping
- 3.3 V and 5 V input supply voltage
- Disable pin switches outputs off
- 14.7 V/ 16 V undervoltage lockout (UVLO) protection with hysteresis
Vorteile
- 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
- Tight part-to-part propogation delay skew of 8 ns max
- Tight channel-to-channel propogation delay skew of 5ns max
- Dual-channel configuation reduces footprint
- Dead time control
- UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
- IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)
Isolated gate drivers are electronic devices designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™ X3 Compact 1ED314x family (single-channel) and 2ED314x family (dual-channel) galvanically isolated gate drivers and share its features, benefits, and the application positioning.
