6ED2230S12C

Überblick

EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2230S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample wafer purchase.

Zusammenfassung der Merkmale

  • 1200-V Thin-Film-SOI technology
  • Integrated Ultra-fast Bootstrap Diode
  • Tolerant to -Vs 100V transient spike
  • Source/sink current 0.35 A/0.65 A
  • Over current protection (+/- 5%)
  • Integrated dead-time protection
  • Shoot-through protection
  • Independent UVLO for VCC and VBS
  • Fault and Enable on the same pin
  • Channels propagation delay matched
  • 3.3 V, 5 V, 15 V input logic

Vorteile

  • Integrated BS diode for cost savings
  • 100 V -VS for increased reliability
  • 50% less on level shift power loss
  • Integrated protection for cost saving
  • UVLO protection at low supply voltage
Diagramme
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