6EDL04N03PR 300 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)

Überblick

EiceDRIVER^TM 300 V 2^nd generation 3 phase gate driver with a typical 0.165 A source and 0.375 A sink current in TSSOP-25 package for IGBTs and MOSFETs.

Zusammenfassung der Merkmale

Infineon thin-film-SOI-technology
Maximum blocking voltage +300 V
Output current +0.165 A/-0.375 A
Integrated Bootstrap Diode
Neg. Vs immunity up to -50 V
Over current & under voltage detection
Programmable delay for fault clear time
Cross-conduction prevention

Vorteile

Smallest footprint package solution
Higher efficiency
Increased reliability
Higher breakdown voltage (300 V)
Easy of design

Diagramme

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