High and low side junction isolated gate drivers

Designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters, Infineon introduces the EiceDRIVER™ 2EDL8x2x family of dual-channel junction-isolated gate driver ICs.

Designers can choose between two different pull-up currents:

• 3 A version: it can be the right choice for retrofit designs
• 4 A version: The industry-leading version recommended to reduce MOSFET switching losses

The 2EDL8XXX family is available with two different input configurations:

• The 2EDL803Xpermits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase.
• The differential input structure of the 2EDL812Xeffectively renders it to be a half-bridge gate driver with built-in shoot-through protection, making it a good choice for the primary-side half-bridge stages with non-diagonal driving scheme.

Common to all variants of 2EDL8XXX Family is the integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching, 2 ns typical, that ensures volt-second balance and avoids magnetic core saturation

The 2EDL8XXX product family comes in different industry-standard leadless package and pin-out: either with the most common and widely used VDSON-8 4x4, VDSON-10 4x4 and VSON-10 3x3 that enables smaller footprint from higher power density designs.