IR2011S
Überblick
200 V high-side and low-side gate driver IC
200 V High and Low Side Driver IC with typical 1 A source and 1 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
Zusammenfassung der Merkmale
- Floating Channel designed for bootstrap operation, dV/dt immune
- Fully operational to 200 V Tolerant to negative transient voltage
- Tolerant to negative tansient voltage
- dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Independent low and high side channels
- Input logic HIN/LIN active high
- Undervoltage lockout for both channels
- 3.3 V and 5 V input logic compatible
- CMOS Schmitt-triggered inputs with pull-down
- Matched propagation delay for both channels
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