IR2106S
Überblick
600 V high-side and low-side gate driver IC
EiceDRIVER™ 600 V high and low-side gate driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
For the newest version with our SOI technology we recommend 2ED2106S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
Zusammenfassung der Merkmale
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout
- 3.3 V, 5 V, and 15 V logic input compatible
- Matched propagation delay for both channels
- Logic and power ground + /- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Outputs in phase with inputs
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