IR2108S
Überblick
600 V half-bridge gate driver IC with shoot through protection
600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
For the new version with our SOI technology we recommend 2ED2108S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
Zusammenfassung der Merkmale
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High side output in phase with HIN input
- Low side output out of phase with LIN input
- Logic and power ground + /- 5 V offset
- Internal 540ns dead-time
- Lower di/dt gate driver for better noise immunity
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