IR2109S
Überblick
600 V half-bridge gate driver IC with shutdown
EiceDRIVER™ 600 V half bridge gate driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
Zusammenfassung der Merkmale
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High side output in phase with IN input
- Logic and power ground + /- 5 V offset
- Internal 540ns dead-time
- Lower di/dt gate driver for better noise immunity
- Shut down input turns off both channels
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