IR21531S
Überblick
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6µs Deadtime in a 8-lead SOIC package and different phase
Vorteile
- Integrated 600V Half-bridge gate driver
- 15.6V zener clamp on Vcc
- True micropower start up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Internal 50nsec (typ.) bootstrap diode (IR21531D)
- Excellent latch immunity on all inputs and outputs
- ESd protection on all leads
- Also available LEAD-FREE
Potentielle Zielanwendungen
- Lighting Fluorescent Ballast
- Primary Side
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6µs Deadtime
EiceDRIVER™ 600 V Half Bridge Gate Driver IC with typical 0.18 A source and 0.26 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
Zusammenfassung der Merkmale
- Integrated 600 V half-bridge gate driver
- 15.6 V zener clamp on Vcc
- True micropower start up
- Tighter initial deadtime control
- Low temperature coefficient deadtime
- Shutdown feature (1/6th Vcc) on CT pin
- Increased undervoltage lockout Hysteresis (1 V)
- Lower power level-shifting circuit
- Constant LO, HO pulse widths at startup
- Lower di/dt gate driver for better noise immunity
- Low side output in phase with RT
- Excellent latch immunity on all inputs and outputs
- ESd protection on all leads
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