IR21814S
Überblick
600 V high-side and low-side gate driver IC
600 V High and Low Side Driver IC with typical 1.9 A source and 2.3 A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
For the new version with our SOI technology we recommend 2ED21814S06J, providing integrated bootstrap diode, better robustness and higher switching frequency
Zusammenfassung der Merkmale
- Floating channel designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 10 to 20 V
- Undervoltage lockout for both channels
- 3.3 V and 5 V input logic compatible
- Matched propagation delay for both channels
- Logic and power ground +/- 5 V offset
- Lower di/dt gate driver for better noise immunity
- Output source/sink current capability 1.4A/1.8A
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