IR2213S
1200 V high- and low-side gate driver IC with shutdown
EiceDRIVER™ 1200 V high- and low-side gate driver IC with typical 2.0 A source and 2.5 A sink currents in DSO-16 lead, wide-body package for IGBT discretes and IGBT modules.
IR2213S utilizes proprietary 1200 V HVIC and latch immune CMOS technologies which enable a rugged, monolithic construction with integrated protective features such under voltage lockout protection, shutdown, and separate logic and power ground.
The IR2213S three-phase gate driver is well suited for low- and medium- power designs up to 10 kW or higher power levels with additional external buffer current driver. IR2213S provides high performance drive capability with protective features for a cost-competitive solution.
IR2213S belongs to the 1200 V level-shift junction isolated (JI) gate driver family.
Zusammenfassung der Merkmale
- Floating channel up to 1200 V
- Tolerant to negative transient voltage
- dV/dt immune
- Gate drive supply range from 12 to 20 V
- Undervoltage lockout for both channels
- 3.3 V logic compatible
- Separate logic supply range from 3.3 V to 20 V
- Logic and power ground +/- 5 V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Vorteile
- our monolithic high-voltage technology allows IR2213S to safely drive 110 Vac to 380 Vac applications and can withstand up to 1200 V dc voltage.
- Under-voltage lockout provides protection at low supply voltage
| Part No | Package | Configuration | Io+/- (typ.) | UVLO (on/off) typ. |
|---|---|---|---|---|
| DSO-24 |
Three-phase |
0.35 / 0.65 A |
11.3 / 12.2 V | |
| SSOP-24 |
Half-bridge |
2 / 3 A |
9.3 / 10.2 V | |
| DSO-24 |
Three-phase |
0.35 / 0.65 A |
9.4 /10.4 V | |
| DSO-28 |
Three-phase |
0.25 / 0.5 A |
8.2 / 8.6 V | |
| DSO-16 |
High- and low-side |
2.0 / 2.5 A |
9.3 /10.2 V |
