IRS21091S

Überblick

600 V half-bridge gate driver IC with shutdown and programmable deadtime

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.

For the new version with our SOI technology we recommend 2ED21091S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Zusammenfassung der Merkmale

  • Floating gate driver designed for bootstrap operation
  • Fully operational to +600 V
  • Tolerant to negative transient voltage, dV/dt immune
  • Gate drive supply range from 10 V to 20 V
  • Undervoltage lockout for both channels
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • High-side output in phase with IN input
  • Logic and power ground +/- 5 V offset
  • Internal 500 ns deadtime, and programmable up to 5 μs with one external RDT resistor
  • Lower di/dt gate driver for better noise immunity
  • The dual function DT/SD input turns off both channels

Potentielle Zielanwendungen

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