IRS2109S
Überblick
600 V half-bridge gate driver IC with shutdown
600 V half-bridge gate driver IC IGBTs and MOSFETs with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package. Also available in 8 Lead PDIP, 14 Lead SOIC, 14 Lead PDIP.
For the new version with our SOI technology we recommend 2ED2109S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
Zusammenfassung der Merkmale
- Floating gate driver designed for bootstrap operation
- Fully operational to +600 V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10 V to 20 V
- Undervoltage lockout for both channels
- 3.3 V, 5 V, and 15 V logic input compatible
- Cross-conduction prevention logic
- Matched propagation delay for both channels
- High-side output in phase with HIN input
- Logic and power ground +/- 5 V offset
- Internal 540 ns deadtime
- Lower di/dt gate driver for better noise immunity
- Shutdown input turns off both channels
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