Three-phase drivers
Gate driver ICs to control power devices like MOSFETs or IGBTs in three-phase topology
Our gate driver IC solutions are the expert’s choice. We offer three phase gate drivers, six channels in a package with three independent half bridges. We also provide three phase gate driver ICs with advanced Infineon silicon on insulator (SOI) technologies. With excellent ruggedness and noise immunity, these gate drivers are perfect for motor drives, home appliance, and battery powered applications.
Automotive qualified three phase gate driver ICs are also available.
Introduction to EiceDRIVER™ gate driver ICs
Our EiceDRIVER™ gate driver IC portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate driver configuration is essential for all power switches, whether they are in discrete form or in a power module.
EiceDRIVER ™ level-shift silicon on insulator (SOI) technology
Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.
EiceDRIVER ™ level-shift junction isolation (JI) technology
The p-n junction-isolation (JI) technology is a mature, proven industry-standard MOS/CMOS fabrication technique. Our proprietary high-voltage integrated circuit (HVIC) and latch-immune CMOS technologies enable rugged monolithic construction. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with the best price per performance.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
