AIKQ200N75CP2 - Infineon Technologies

Überblick

The automotive IGBT discrete AIKQ200N75CP2 is an EDT2 IGBT with a co-packed diode in the TO247PLUS package. The 750V EDT technology significantly improves energy efficiency and cooling efforts for high voltage automotive applications by enabling battery voltages up to 470V and safe fast switching due to increased overvoltage margins. Thus enabling high performant inverter systems.

The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability.

With a 200 A nominal current, the AIKQ200N75CP2 classifies as best in class discrete IGBT in a TO247PLUS package. This feature reduces the number of paralleled devices required to reach a certain power class, increasing power density and reducing the overall system cost.

Zusammenfassung der Merkmale

VCE = 750 V
750 V collector-emitter blocking voltage capability
Smooth switching characteristics
Very low VCE(sat), 1.30 V at ICnom = 200 A
Short circuit robust
Very tight parameter distribution
Low gate charge QG
Copackaged with fast soft recovery Emitter Controlled 3 diode
Qualified according to AEC-Q101
Increase overvoltage margin in the application
Reduction of the number of paralleled devices required
Simple gate drive design
Self limiting current under short circuit condition
Low EMI signature
High reliability and operating lifetime

Vorteile

Benchmark quality and switching performance for 470V Vdc systems
This TO-247PLUS package with high creepage distance fulfills automotive high voltage application requirements up to 470V Vdc.
Extremely robust design to fulfill customer’s mission profile
High switching frequencies for less switching losses and cooling effort
Paralleling allows different power class inverters to be addressed with the same product, generating power scalability and cost optimization

Potentielle Zielanwendungen