AIKBE50N65RF5 Automotive Silicon-carbide (SiC) Hybrid Discrete 650 V in D2PAK-7L

Überblick

Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC.

Zusammenfassung der Merkmale

  • 650 V breakdown voltage
  • IC = 50 A
  • Best-in-class efficiency
  • Trenchstop™ 5 fast-switching IGBT
  • CoolSiC™ Schottky diode G5
  • Low gate charge QG
  • Maximum junction temperature Tvjmax = 175°C
  • Kelvin emitter connection

Vorteile

  • Highest reliability against environmental conditions
  • Increased system efficiency
  • Best performance/cost ratio for hard switching topologies
  • Supporting bi-directional On-Board Charger designs

Potentielle Zielanwendungen

• On-board charger

• DC/DC converter

Support