IGP40N65F5
Überblick
650 V, 40 A IGBT Discrete in TO-247 package
Hard- switching 650 V, 40 A TRENCHSTOP™5 IGBT discrete in TO-247 package for high efficiency demands.
Zusammenfassung der Merkmale
- 650V breakthrough voltage
- Compared to Infineon’s Best-in-class HighSpeed 3 family
- Factor 2.5 lower Q g
- Factor 2 reduction in switching losses
- 200mV reduction in V CE(sat)
- Low C OES/E OSS
- Mild positive temperature coefficient V CE(sat)
- Temperature stability of V f
Vorteile
- Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
- 50V increase in the bus voltage possible without compromising reliability
- Higher power density design
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