IHW30N110R5
Überblick
1100 V, 30 A IGBT with monolithically integrated diode in TO-247 package
Reverse Conducting R5 1100 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using single-ended resonant topology. Thanks to best product performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.
Zusammenfassung der Merkmale
- Powerful monolithic body diode with low forward voltage designed for soft commutation only
- Very tight parameter distribution
- High ruggedness, temperature stable behavior
- Very low VCEsat
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Low EMI
- Vg = 25 V
- Maximum operating TJ of 175 °C
- Pb-free lead plating; RoHS compliant
Vorteile
- Lowest power dissipation
- Better thermal management for higher reliability
- Optimized for switching frequency up to 60 kHz
- Highest reliability against capacitive peak currents
- Lower EMI filtering requirements
Diagramme
Support
