IKP30N65F5
Überblick
650 V, 30 A IGBT with anti-parallel diode in TO-220 package
High Speed 650 V, 30 A TRENCHSTOP™ 5 fast IGBT in a TO-220 package copacked with fast and soft RAPID 1 anti-parallel diode.
Zusammenfassung der Merkmale
- 650 V breakthrough voltage
- Compared to best-in-class HighSpeed 3 family
- Factor 2.5 lower Qg
- Factor 2 reduction in switching losses
- 200mV reduction in VCEsat
- Co-packed with Rapid Si-diode technology
- Low COES/EOSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Vorteile
- Best-in-class efficiency, resulting in lower junction and
case temperature leading to higher device reliability - 50 V increase in the bus voltage possible without compromising
reliability - Higher power density design
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