IKP39N65ES5

Überblick

650 V, 39 A IGBT with anti-parallel diode in TO-220 package

Hard-switching 650 V, 39 A TRENCHSTOP™ 5 S5 IGBT in a small footprint TO-220 package addresses applications switching between 10 kHz and 40 kHz to deliver high current density, high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

Zusammenfassung der Merkmale

  • Very low VCEsat of 1.45 V at 25°C
  • 4 times Ic pulse current (100°C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  • Maximum junction temperature Tvj = 175°C
  • Qualified according to JEDEC standards

Vorteile

  • Highest power density in TO-220 footprint
  • VCEpeak clamping circuits not required
  • No need for gate clamping components
  • Good EMI behaviour
  • Excellent for paralleling
Diagramme
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