IKQ75N120CS6

Überblick

1200 V, 75 A IGBT with anti-parallel diode in TO-247 package

Hard-switching 1200 V, 75 A high speed TRENCHSTOP™ IGBT6 co-packed with a very soft and fast recovery full current anti-parallel diode in a TO-247PLUS 3pin package is the responding to the market requirements for high efficiency and high current density in small discrete packages.  

Zusammenfassung der Merkmale

  • High efficiency in hard switching and resonant topologies
  • Low saturation voltage if 1.85 V combined with low switching losses
  • Easy paralleling capability due to positive temperature coefficient in VCEsat
  • Low EMI
  • Low Gate Charge QG
  • Very soft, fast recovery anti-parallel diode
  • High ruggedness, temperature stable behaviour
  • Very tight parameter distribution
  • High power density and low thermal resistance of the TO-247PLUS package

Vorteile

  • Lowest losses on IGBT, high system efficiency for higher power output
  • Fast and easy replacement of predecessor H3 technology
  • High device reliability and lifetime expectancy
  • Highest current of 75 A 1200 V IGBT with 75 A diode in TO-247 footprint
  • Lower thermal resistance Rth(jh) of the TO-247PLUS benefits to ~15% better heat dissipation and extended lifetime expectancy of IGBT
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