IKZA50N120CH7 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package

Überblick

Hard-switching 1200 V, 50 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.

Zusammenfassung der Merkmale

  • Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, resulting in low Qrr
  • Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
  • Offering Tj(max) of 175°C

Vorteile

  • Technology with the highest power density with up to 140 A rating
  • Optimized performance in application conditions
  • Lowest conduction losses
  • Lowest switching losses
  • Humidity robustness under harsh environment
  • Improved EMI performance
  • Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin
product image for TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology
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