DD1200S17H4_B2 1700 V, 1200 A diodes IGBT module
Überblick
1700 V IHMB 130mm Diode Module with AlSiC base-plate and Emitter Controlled 4 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT4 products.
Zusammenfassung der Merkmale
- T vj op = 150°C
- High reliability and robust module construction
- UL recognised
- Enlarged Diode for regenerative operation
Vorteile
- High power density for compact inverter designs
- Standardized housing
Potentielle Zielanwendungen
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Diagramme
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