DD1600S33HE4 3300 V, 1600 A diodes IGBT module

Überblick

IHV B 3300 V, 1600 A 130 mm diode IGBT module with EC4 - Diode. The best solution for your transportation and industry applications and predestined to be combined with IGBT4 IHV B 3300 V products.

Zusammenfassung der Merkmale

  • High DC stability
  • High surge current capability
  • Tvj op =150°C
  • AlSiC base plate with AlN substrate
  • Package with CTI > 600
  • Fire & smoke EN45545 R22, R23: HL3
  • Low recovery losses
  • Isolated base plate
  • 2x PowerCycling vs state of the art

Vorteile

  • Unbeatable robustness
  • 2xPC =200% lifetime
  • 2xPC =110% power same lifetime
  • 2xPC = 8K more safety buffer
  • Best in class by +40% power output 
  • 1:1 mechanical swap to 130x140 IHV
  • DD+FZ1600 enables 1.6+ MW aircooled

 

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