DD450S45T3E4_B5 4500 V, 450 A Diode IGBT module

Überblick

XHP™ 3 4500 V, 450 A Diode IGBT module with Emitter Controlled C4 Diode and with enhanced isolation of 10.4 kV. Predestined to be combined with IGBT module FF450R45T3E4_B5.

Zusammenfassung der Merkmale

  • High DC stability
  • High short-circuit capability
  • High surge current capability
  • Unbeatable robustness
  • Tvj op=150°C
  • AlSiC base plate for increased thermal cycling capability
    Package with CTI > 600
  • Fire & smoke classification acc. EN45545 R22, R23, R24: HL2

Vorteile

  • Low inductive module
  • Enables clean electrical- and mechanical design
  • Easy set-up of 3-level NPC1 topology
  • Easy set-up of parallel configuration
  • Scalability: better adaptation to various power levels on smaller steps
  • Easier: logistic handling and stocking
  • Enables downsizing on system level
Diagramme
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